![]() Photodetectors (PDs) for flame detection, and high-power electronics. Ga 2O 3 has recently emerged as a promisingĬandidate because it can be used as the absorbing layer in solar-blind Great chance to obtain large-scale membranes. Nevertheless, it is clear that epitaxy using the GR layer offers a Peeling the membranes from the GR layer, the membranes were flake-like. demonstrated transferable GaN-based light-emitting diodes by 12− 14 Particularly, although ChungĮt al. Subjected to N 2 plasma treatment for the subsequent growth used GR layers directly grown on sapphire substrates 7− 11 However, direct epitaxial growth of 3D materials on 2D materials,Įspecially for GR, is not straightforward owing to its low surfaceĮnergy. The considerably weaker bonding strength at the interface of 2D/2DĪnd 3D/2D surfaces alleviates interfacial toughness and allows 3D-materials Such as graphene (GR) and h-BN can be a good candidate. Two-dimensional (2D) materials, weakly bonded by van der Waals force, To respond to the challenge, 3D materials growth by using Process, and there are difficulties in finding proper sacrificial Lift-off, it also has several drawbacks as it is an extremely expensive Membranes have been performed by using laser lift-off and chemical Although many attempts to obtain the large-scale 4− 6 Despite suchĪdvantages, the successful development of membrane-based devices hasīeen limited because it is challenging to obtain the large-scale membranesīy growing three-dimensional (3D) materials on 3D materials stronglyīonded by covalent bonding. Various kinds of membranes on one single chip. 1− 3 In addition, multifunctional devicesĬan be achieved through heterogeneous integration by transferring Gives a great opportunity to make unprecedented devices such as ultralightweight,įlexible, and vertical devices. The development of large-scale compound semiconductor membranes The nanomembranes, and the technique is relevant to eventual nanomembrane-based The use of GR templates contributes to the seamless exfoliation of The β-Ga 2O 3 layer was spontaneouslyĮxfoliated at the interface of GR owing to its low interfacial toughnessīy controlling the energy release rate through electroplated Ni layers. Of SiC, and thus enabled β-Ga 2O 3 direct-epitaxy The EG was favorably influenced by lattice arrangement Grown on SiC, and demonstrated high-responsivity flexible solar-blind Here, we report on a large-area β-Ga 2O 3 nanomembrane spontaneous-exfoliation (1 cm ×ġ cm) from layers of compressive-strained epitaxial graphene (EG) Power devices and deep ultraviolet optoelectronics at a fraction of ![]() Offer effective cooling and dimensional scale-down for high voltage Waals force, is a subject of interest for fabricating technologically Using graphene (GR), weakly bonded by van der ![]() The use of GR templates contributes to the seamless exfoliation of the nanomembranes, and the technique is relevant to eventual nanomembrane-based integrated device technology. The β-Ga2O3 layer was spontaneously exfoliated at the interface of GR owing to its low interfacial toughness by controlling the energy release rate through electroplated Ni layers. The EG was favorably influenced by lattice arrangement of SiC, and thus enabled β-Ga2O3 direct-epitaxy on the EG. Here, we report on a large-area β-Ga2O3 nanomembrane spontaneous-exfoliation (1 cm × 1 cm) from layers of compressive-strained epitaxial graphene (EG) grown on SiC, and demonstrated high-responsivity flexible solar-blind photodetectors. Such membranes can potentially offer effective cooling and dimensional scale-down for high voltage power devices and deep ultraviolet optoelectronics at a fraction of the bulk-device cost. Epitaxial growth using graphene (GR), weakly bonded by van der Waals force, is a subject of interest for fabricating technologically important semiconductor membranes. ![]()
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